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Freescale Semiconductor Technical Data
Document Number: MRF6S9125N Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. N - CDMA Application * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watt Avg., Full Frequency Band (865 - 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 20.2 dB Drain Efficiency -- 31% ACPR @ 750 kHz Offset = - 47.1 dBc in 30 kHz Bandwidth GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 60 Watts Avg., Full Frequency Band (865 - 960 MHz or 921 - 960 MHz) Power Gain -- 20 dB Drain Efficiency -- 40% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.8% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Frequency Band (921 - 960 MHz) Power Gain -- 19 dB Drain Efficiency -- 62% * Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 125 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S9125NR1 MRF6S9125NBR1
865 - 960 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 398 2.3 - 65 to +150 200 Unit Vdc Vdc W W/C C C
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S9125NR1 MRF6S9125NBR1 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 125 W CW Case Temperature 76C, 27 W CW Symbol RJC Value (1,2) 0.44 0.45 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) C (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.74 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 8 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 2 60 -- -- pF pF VGS(th) VGS(Q) VDS(on) gfs 1 2 0.05 -- 2.1 2.89 0.23 6 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 19 29 -- -- 20.2 31 - 47.1 - 16 24 -- - 45 -9 dB % dBc dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally input matched. (continued)
MRF6S9125NR1 MRF6S9125NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg., 921 - 960 MHz, EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 20 40 1.8 - 63 - 78 -- -- -- -- -- dB % % rms dBc dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 125 W, 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW (f = 880 MHz) Gps D IRL P1dB -- -- -- -- 19 62 - 12 125 -- -- -- -- dB % dB W
MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 3
R1 VBIAS + C10 RF INPUT C9 + C8 + C7 R2 C6 L1 Z1 C1 C2 C3 C5 Z2 Z3 Z4 Z5 Z6 Z7 C4 Z8 C11 DUT C12 C13 C14 Z9 Z10 L2 Z11 Z12 Z13 Z14 C18 C19
+ C20
+ C21
+ C22
VSUPPLY C23
Z15
Z16
RF Z17 OUTPUT C17
C15
C16
Z1, Z17 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.200 1.060 0.382 0.108 0.200 0.028 0.236 0.050 0.238
x 0.080 x 0.080 x 0.220 x 0.220 x 0.420 x 0.620 x 0.620 x 0.620 x 0.620
Microstrip Microstrip Microstrip Microstrip x 0.620 Taper Microstrip Microstrip Microstrip Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB
0.057 x 0.620 Microstrip 0.119 x 0.620 Microstrip 0.450 x 0.220 Microstrip 0.061 x 0.220 Microstrip 0.078 x 0.220 Microstrip 0.692 x 0.080 Microstrip 0.368 x 0.080 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S9125NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part C1 C2 C3, C15 C4, C5 C6, C18, C19 C7, C8 C9, C23 C10 C11, C12 C13, C14 C16 C17 C20, C21 C22 L1 L2 R1 R2 Description 20 pF Chip Capacitor 6.2 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitors, Gigatrim 11 pF Chip Capacitors 0.56 F, 50 V Chip Capacitors 47 F, 16 V Tantalum Capacitors 47 pF Chip Capacitors 100 F, 50 V Electrolytic Capacitor 12 pF Chip Capacitors 5.1 pF Chip Capacitors 0.3 pF Chip Capacitor 39 pF Chip Capacitor 22 F, 35 V Tantalum Capacitors 470 F, 63 V Electrolytic Capacitor 7.15 nH Inductor 8.0 nH Inductor 15 , 1/4 W Chip Resistor (1210) 560 k, 1/8 W Resistor (1206) Part Number 600B200FT250XT 600B6R2BT250XT 27291SL 600B110FT250XT C1825C564J5RAC 593D476X9016D2T 700B470FW500XT 515D107M050BB6A 600B120FT250XT 600B5R1BT250XT 700B0R3BW500XT 700B390FW500XT T491X226K035AS SME63V471M12X25LL 1606 - 7J A03T ATC ATC Johanson ATC Kemet Vishay ATC Vishay ATC ATC ATC ATC Kemet United Chemi - Con CoilCraft CoilCraft Manufacturer
MRF6S9125NR1 MRF6S9125NBR1 4 RF Device Data Freescale Semiconductor
C8 C7 C9 VGG C10 C1 CUT OUT AREA L1 C2 C5 C3 C6 C19
C20 C21
C22
R2 R1
VDD C18 C14 L2 C23 C17
C4
C11
C13 C12
C15
C16
900 MHz TO272 WB Rev. 0
Figure 2. MRF6S9125NR1(NBR1) Test Circuit Component Layout
MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -5 -10 -15 -20 -25 20.5 20.3 Gps, POWER GAIN (dB) 20 19.8 19.5 19.3 19 18.8 ALT1 18.5 850 860 870 880 890 900 f, FREQUENCY (MHz) -70 910 D VDD = 28 Vdc, Pout = 27 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13 IRL ACPR Gps 34 32 30 28 -30 -40 -50 -60
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 27 Watts Avg.
19.6 19.4 Gps, POWER GAIN (dB) 19.2 19 18.8 18.6 18.4 18.2 18 850 D
Gps
52 48 44
-30 ACPR -40 -50 ALT1 -60 -70 910
IRL
860
870
880
890
900
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 62.5 Watts Avg.
22 21 Gps, POWER GAIN (dB) 1187 mA 20 19 18 17 16 1 950 mA
IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
IDQ = 1475 mA
-10 VDD = 28 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements IDQ = 1425 mA 475 mA -40 712 mA
-20
-30
712 mA 475 mA
-50 1187 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 950 mA 100 300
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements 10 Pout, OUTPUT POWER (WATTS) PEP 100 300
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S9125NR1 MRF6S9125NBR1 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 62.5 W (Avg.) IDQ = 950 mA, N-CDMA IS-95 Pilot Sync, Paging, Traffic Codes 8 Through 13
40
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 5th Order -60 7th Order -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 3rd Order VDD = 28 Vdc, IDQ = 950 mA f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements
-10 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 950 mA, Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 3rd Order 5th Order -40
-20
-30
-50
7th Order
-60 0.1 1 10 100 TWO -TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Output Power
56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 28 29 30 31 32 33 P1dB = 51.5 dBm (139.3 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P3dB = 52.4 dBm (172.5 W)
Ideal
Actual
VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz 34 35 36
Pin, INPUT POWER (dBm)
Figure 9. Pulse CW Output Power versus Input Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 950 mA f = 880 MHz, N-CDMA IS-95 (Pilot 40 Sync, Paging, Traffic Codes 8 Through 13) 30 Gps 25_C 10 0 0.1 1 25_C 85_C 10 100 -30_C TC = -30_C 25_C D 85_C -30_C 25_C 85_C ACPR -70 -80 200 -50 ALT1 -40 -30 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc)
20
-60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
22 21 Gps, POWER GAIN (dB) 20 19 18 17 25_C 16 15 1 10 Pout, OUTPUT POWER (WATTS) CW 100 85_C VDD = 28 Vdc IDQ = 950 mA f = 880 MHz Gps TC = -30_C -30_C
70 60 D, DRAIN EFFICIENCY (%)
21
20 Gps, POWER GAIN (dB)
25_C 85_C D
50 40 30 20 10 0 200
19 32 V 28 V 24 V 17 16 V 16 0 VDD = 12 V 50 100 150 20 V IDQ = 950 mA f = 880 MHz 200 250
18
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
109 MTTF FACTOR (HOURS X AMPS2)
Figure 12. Power Gain versus Output Power
108
107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 13. MTTF Factor versus Junction Temperature
MRF6S9125NR1 MRF6S9125NBR1 8 RF Device Data Freescale Semiconductor
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ 1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . -ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ............ . . ...... ... . .. .. ...... ....... ...
Figure 14. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5
-0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single - Carrier N - CDMA Spectrum
MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 9
f = 900 MHz Zload
f = 860 MHz
Zo = 5
f = 900 MHz
Zsource f = 860 MHz
VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. f MHz 860 865 870 875 880 885 890 895 900 Zsource 0.62 - j2.13 0.64 - j2.31 0.62 - j2.45 0.59 - j2.43 0.57 - j2.42 0.54 - j2.36 0.57 - j2.18 0.58 - j1.94 0.59 - j1.86 Zload 1.48 - j0.14 1.56 - j0.09 1.66 - j0.02 1.73 + j0.04 1.74 + j0.11 1.68 + j0.19 1.61 + j0.25 1.52 + j0.33 1.48 + j0.37
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MRF6S9125NR1 MRF6S9125NBR1 10 RF Device Data Freescale Semiconductor
EDGE CHARACTERIZATION
L1 VBIAS + C21 RF INPUT + C1 + C2 C3 R1 Z8 Z1 C4 C5 C6 C7 Z2 Z3 Z4 Z5 Z6 C8 Z7 C9 DUT C11 C12 C13 C14 L2 C10 Z9 Z10 Z11 Z12 Z13 Z14 C16 C17 + C18 + C19 + C20
VSUPPLY
RF OUTPUT Z15 C15
Z1, Z15 Z2 Z3 Z4 Z5 Z6 Z7, Z8
0.150 1.050 0.330 0.220 0.420 0.200 0.040
x 0.080 x 0.080 x 0.220 x 0.100 x 0.100 x 0.620 x 0.620
Microstrip Microstrip Microstrip x 0.420 Taper x 0.620 Taper Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 PCB
0.620 x 0.100 x 0.420 Taper 0.420 x 0.100 x 0.220 Taper 0.325 x 0.220 Microstrip 0.040 x 0.220 Microstrip 0.475 x 0.080 Microstrip 0.400 x 0.080 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 17. MRF6S9125NR1(NBR1) Test Circuit Schematic
Table 7. MRF6S9125NR1(NBR1) Test Circuit Component Designations and Values
Part C1, C2 C3, C16, C17 C4 C5, C7, C8 C6, C13 C9, C10 C11 C12 C14 C15 C18, C19 C20 C21 L1 L2 R1 Description 47 F, 16 V Tantalum Capacitors 0.56 F, 50 V Chip Capacitors 20 pF Chip Capacitor 6.2 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 11 pF Chip Capacitors 5.1 pF Chip Capacitor 4.7 pF Chip Capacitor 0.3 pF Chip Capacitor 39 pF Chip Capacitor 22 F, 35 V Tantalum Capacitors 470 F, 63 V Electrolytic Capacitor 100 F, 50 V Electrolytic Capacitor 7.15 nH Inductor 8 nH Inductor 15 , 1/4 W Chip Resistor Part Number TPSD476K016R0150 C1825C564J5GAC 600B200FT250XT 600B6R2BT250XT 27291SL 600B110FT250XT 600B5R1BT250XT 600B4R7BT250XT 700B0R3BW500XT 700B390FW500XT T491X226K035AS NACZF471M63V 515D107M050BB6A 1606 - 7 A03T - 5 AVX Kemet ATC ATC Johanson Dielectrics ATC ATC ATC ATC ATC Kemet Nippon Multicomp Coilcraft Coilcraft Manufacturer
MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 11
EDGE CHARACTERIZATION
C21
C1
C2 L1
C3
C17
C18 C19
C20
C16 C12 L2 CUT OUT AREA C4 C5 C7 C11 C9 C13 C14 900 MHz TO-272 WB Rev. 2 C15
R1
C8
C10
C6
Figure 18. MRF6S9125NR1(NBR1) Test Circuit Component Layout
MRF6S9125NR1 MRF6S9125NBR1 12 RF Device Data Freescale Semiconductor
EDGE CHARACTERIZATION
EVM, ERROR VECTOR MAGNITUDE (% ms)
5 EVM, ERROR VECTOR MAGNITUDE (% ms) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 900 910 920 930 940 950 20 W Avg. 60 W Avg. VDD = 28 Vdc IDQ = 700 mA Pout = 70 W Avg.
15 VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation TC = 25_C EVM
75
9 D 6
45
30
3 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG.
15 0 300
960
970
980
990
f, FREQUENCY (MHz)
Figure 19. EVM versus Frequency
Figure 20. EVM and Drain Efficiency versus Output Power
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
-52.5
VDD = 28 Vdc, IDQ = 700 mA f = 943 MHz, EDGE Modulation SR @ 400 kHz
Pout = 70 W Avg.
-60
60 W Avg.
-67.5 SR @ 600 kHz -75 -82.5 900 910 920 930 940 950 f, FREQUENCY (MHz)
20 W Avg. 70 W Avg. 60 W Avg. 20 W Avg. 960 970 980
Figure 21. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency
-45 SPECTRAL REGROWTH @ 400 kHz (dBc) -48 -51 -54 -57 -60 -63 -66 -69 -72 -75 0 22.5 45 67.5 90 112.5 135 Pout, OUTPUT POWER (WATTS) SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation -53 -56 -59 -62 -65 -68 -71 -74 -77 -80 -83 0 22.5 45 67.5 90 112.5 135 Pout, OUTPUT POWER (WATTS) TC = 25_C VDD = 28 Vdc IDQ = 700 mA f = 943 MHz EDGE Modulation
TC = 25_C
Figure 22. Spectral Regrowth at 400 kHz versus Output Power
Figure 23. Spectral Regrowth at 600 kHz versus Output Power
MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 13
D, DRAIN EFFICIENCY (%)
12
60
EDGE CHARACTERIZATION TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 943 MHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 24. EDGE Spectrum
MRF6S9125NR1 MRF6S9125NBR1 14 RF Device Data Freescale Semiconductor
f = 980 MHz Zload
f = 900 MHz Zo = 5
f = 980 MHz
Zsource
f = 900 MHz
VDD = 28 Vdc, IDQ = 700 mA, Pout = 60 W Avg. f MHz 900 905 910 915 920 925 930 935 940 945 950 955 960 965 970 975 980 Zsource W 1.04 - j2.65 1.04 - j2.60 1.03 - j2.55 1.02 - j2.51 1.01 - j2.46 1.01 - j2.41 1.00 - j2.36 0.98 - j2.32 0.97 - j2.27 0.96 - j2.22 0.95 - j2.17 0.94 - j2.12 0.94 - j2.08 0.93 - j2.03 0.93 - j1.99 0.92 - j1.94 0.92 - j1.90 Zload W 1.66 - j0.56 1.66 - j0.50 1.67 - j0.43 1.68 - j0.37 1.68 - j0.31 1.69 - j0.24 1.70 - j0.18 1.70 - j0.12 1.71 - j0.05 1.72 - j0.00 1.73 + j0.07 1.74 + j0.14 1.76 + j0.20 1.77 + j0.26 1.79 + j0.32 1.80 + j0.39 1.82 + j0.45 Z source Z load Input Matching Network Device Under Test Output Matching Network
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Figure 25. Series Equivalent Source and Load Impedance for EDGE Characterization Tests MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 15
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
b1 aaa M C A
4X
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
MRF6S9125NR1 MRF6S9125NBR1 16 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
E5 BOTTOM VIEW
1
2
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S9125NR1
STYLE 1: PIN 1. 2. 3. 4. 5.
MRF6S9125NR1 MRF6S9125NBR1 RF Device Data Freescale Semiconductor 17
MRF6S9125NR1 MRF6S9125NBR1 18 RF Device Data Freescale Semiconductor
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MRF6S9125NR1 MRF6S9125NBR1
Rev. 20 4, 5/2006 Document Number: MRF6S9125N
RF Device Data Freescale Semiconductor

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